MMDT2222A_2 Datasheet, PDF (3/4 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

100
30
20
10
5.0
f = 1MHz
C_ibo
C_obo
1.0
0.1
1.0
10
50
V_R, REVERSE VOLTAGE (V)
Fig. 3, Typical Capacitance Characteristics
0.5
I_C
I_B ^{= 10}
0.4
T_A = 25°C
0.3
T_A = 150°C
0.2
0.1
T_A = -50°C
0
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
2.0
1.8
I_C = 1mA
I_C = 30mA
1.6
I_C = 10mA
I_C = 100mA
1.4
1.2
I_C = 300mA
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Fig. 4, Typical Collector Saturation Region
1.0
0.9 ^{VCE = 5V}
0.8
T_A = -50°C
0.7
T_A = 25°C
0.6
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 6, Typical Base-Emitter Voltage vs. Collector Current
100
10
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 7, Typical Gain Bandwidth Product
vs. Collector Current
DS30125 Rev. 12 - 2
3 of 4
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MMDT2222A
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