MMBT123S_1 Datasheet, PDF (3/3 Pages) Diodes Incorporated – 1A NPN SURFACE MOUNT TRANSISTOR

350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
100
f = 1MHz
10
1
0.1
1
10
100
V_CB, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage
1000
100
1
0.0001
V_CE = 1.0V
.001
.01
.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain vs
Collector Current
1000
100
10
1
0.0001 .001
.01
.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 4, Collector Saturation Voltage vs
Collector Current
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30292 Rev. 6 - 2
3 of 3
www.diodes.com
MMBT123S