MMBF170_1 Datasheet, PDF (3/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

1.0
V_GS = 10V
9.0V
8.0V
7.0V
6.5V
0.8
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
0.6
2.5V
2.1V
10V
0.4
5.5V
5.0V
0.2
0
0
2.0
2.1V
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
1.5
V_GS = 10V, I_D = 0.5A
V_GS = 5.0V, I_D = 0.05A
1.0
0.5
0
-55 -30
-5 20 45 70 95 120 145
T_j, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
7
T_j = 25°C
6
5
V_GS = 5.0V
4
3
V_GS = 10V
2
1
0
0
0.2
0.4
0.6
0.8
1.0
I_D, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
6
5
4
I_D = 500mA
I_D = 50mA
3
2
1
0
0 2 4 6 8 10 12 14 16 18
V_GS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 5, Max Power Dissipation vs
Ambient Temperature
DS30104 Rev. 8 - 2
3 of 4
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MMBF170