MJD31C Datasheet, PDF (3/5 Pages) ON Semiconductor – SILICON POWER TRANSISTORS

MJD31C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 4)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Small Signal Current Gain
Symbol Min
Typ
Max Unit
Test Conditions
V_(SUS)CEO 100
⎯
⎯
V I_C = 30mA, I_B = 0
I_CEO
⎯
⎯
50
μA V_CB = 60V, I_B = 0
I_CES
⎯
⎯
20
μA V_CE = 100V, V_EB = 0
I_EBO
⎯
⎯
1.0
mA V_EB = 5.0V, I_C = 0
V_CE(SAT)
⎯
⎯
1.2
V I_C = 3.0A, I_B = 375mA
V_BE(ON)
⎯
⎯
1.8
V V_CE = 4.0V, I_C = 3A
h_FE
25
10
⎯
⎯
50
⎯
V_CE = 4.0V, I_C = 1A
V_CE = 4.0V, I_C = 3A
f_T
3.0
⎯
⎯
MHz
I_C = 500mA, V_CE = 10V,
f = 1MHz
h_fe
20
⎯
⎯
⎯ V_CE = 10V, I_C = 0.5A, f = 1KHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
1,000
V_CE = 4V
1.5
T_A = 150°C
T_A = 85°C
T_A = 25°C
1.0
100
T_A = -55°C
0.5
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
I_C/I_B = 8
10
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 4V
1.0
0.1
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 T_A = 85°C
0.2 ^TA ^{= 150°C}
0.01
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
1
10
100
1,000
10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
MJD31C
Document number: DS31625 Rev. 3 - 2
3 of 5
www.diodes.com
April 2010
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