MBRD1040 Datasheet, PDF (3/3 Pages) Diodes Incorporated – 10A LOW VF SCHOTTKY BARRIER RECTIFIER

8
7
T_j = 150°C
6
Note 7
5
DC
4
3
Note 6
2
1
0
0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15
I_F(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
Notes:
3. TA = TSOLDERING POINT, RqJC = 6.0°C/W, RqCA = 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R_qJA in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R_qJA in range of
60-75°C/W.
6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5.
7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4.
DS30282 Rev. 3 - 2
3 of 3
MBRD1040