FZT1151A Datasheet, PDF (3/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT1151A
TYPICAL CHARACTERISTICS
1.0
+25°C
0.8
0.6
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.4
0.2
0
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
1.0
IC/IB=100
0.8
0.6
-55°C
+25°C
+100°C
0.4
0.2
0
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
750
VCE=2V
500
250
+100°C
+25°C
-55°C
0
1m
10m
100m
1
10
IC - Collector Current (A)
hFE v IC
1.4
IC/IB=100
1.2
1.0
0.8
0.6
0.4
-55°C
+25°C
+100°C
0.2
0
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
1.2
VCE=2V
0.9
0.6
0.3
-55°C
+25°C
+100°C
0
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
10
1
100m
DC
1s
100ms
10ms
1ms
100us
10m
100m
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area