FMMT497_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – SOT23 NPN silicon planar high voltage high performance transistor

Typical characteristics
0.6
+25 ° C
0.5
0.4
IC/IB=10
IC/IB=50
0.3
0.2
0.1
0
1mA
10mA
100mA
1A
IC-Collector Current
VCE(sat) v IC
400 _VCE=10V
+100 °C
300
+25 °C
200
-55 °C
100
0
1mA
10mA
100mA
1A
IC-Collector Current
hFE V IC
FMMT497
0.6
IC/IB=10
0.5
0.4
0.3
-55 °C
+25 °C
+100 °C
0.2
0.1
0
1mA
10mA
100mA
1A
IC-Collector Current
VCE(sat) v IC
0.9 ^IC/IB=10
0.8
0.6
0.4
-55 °C
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA
1A
IC-Collector Current
VBE(sat) v IC
0.9 ^VCE=10V
0.8
0.6
0.4
-55 °C
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA
1A
IC-Collector Current
VBE(on) v IC
1
0.1
0.01
DC
1s
100ms
10ms
1ms
100µs
0.001
0.1
1
10
100
1000
VCE - Collector Emitter Voltage (V)
Safe Operating Area
Issue 4 - November 2006
3
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