DXTP560BP5 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Thermal Characteristics
A Product Line of
Diodes Incorporated
DXTP560BP5
1
V
CE(sat)
Limited
100m
DC _1s
100ms
10ms
10m
1ms
50mm x 50mm 2oz Cu
T =25°C
amb
100µs
Single Pulse
1m
10m 100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
40
50mm x 50mm 2oz Cu
T =25°C
amb
30 _D=0.5
20
D=0.2
Single Pulse
10
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
3.0
50mm x 50mm
2.5
2oz Cu
25mm x 25mm
2.0
1oz Cu
1.5
1.0
Minimum Recommended
Pad layout 1oz Cu
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
50mm x 50mm 2oz Cu
T =25°C
amb
Single Pulse
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
POWERDI is a registered trademark of Diodes Incorporated.
DXTP560BP5
Datasheet Number: DS35054 Rev: 1 - 2
3 of 7
www.diodes.com
January 2011
© Diodes Incorporated