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| DST857BDJ Datasheet, PDF (3/5 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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DST857BDJ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min
-50
-50
-45
-6
-
100
200
-
-
-
-
-600
Typical
-100
-90
-65
-8.5
-
340
330
-70
-300
-760
-885
-670
-715
Current Gain-Bandwidth Product
fT
100
340
Output Capacitance
Cobo
-
2.0
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Max
-
-
-
-
-15
-
470
-175
-500
-1000
-1100
-780
-850
-
-
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = -10μA, IB = 0
IC = -10μA, IB = 0
IC = -1mA, IB = 0
IE = -1μA, IC = 0
VCB = -30V
IC = -10μA, VCE = -5V
IC = -2.0mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
VCE = -5V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
0.18
0.16
0.14
0.12
0.10
0.08
0.06
IB = -2mA
IB = -1.8mA
IB = -1.6mA
IB = -1.4mA
IB = -1.2mA
IB = -1mA
IB = -0.8mA
IB = -0.6mA
IB = -0.4mA
0.04
IB = -0.2mA
0.02
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
600
550
TA = 150°C
500
450
TA = 125°C
400
TA = 85°C
350
300
TA = 25°C
250
VCE = 5V
200
150
TA = -55°C
100
50
0
0
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DST857BDJ
Document number: DS32037 Rev. 1 - 2
3 of 5
www.diodes.com
January 2010
© Diodes Incorporated
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