DSS60600MZ4 Datasheet, PDF (3/5 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

DSS60600MZ4
1.2
1,000
1.0
I_B = -5mA
0.8
I_B = -4mA
0.6
I_B = -3mA
0.4
I_B = -2mA
0.2
I_B = -1mA
0
0
4
8
12
16
20
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
I_C/I_B = 10
T_A = 150°C
0.1
T_A = 85°C
0.01
T_A = 25°C
T_A = -55°C
100
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
V_CE = -2V
10
1
10
100 1,000 10,000 100,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1.2
V_CE = -2V
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2 ^{TA = 150°C}
0.001
1
10
100 1,000 10,000 100,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 ^{TA = 85°C}
T_A = 150°C
0.2
0
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
C_ibo
100
C_obo
0
1
10
100 1,000 10,000 100,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
3 of 5
www.diodes.com
December 2008
© Diodes Incorporated