DSS5160T Datasheet, PDF (3/6 Pages) Diodes Incorporated – 60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

DSS5160T
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Symbol Min
BV_CBO
-80
BV_CEO
-60
BV_EBO
-5
⎯
I_CBO
⎯
I_EBO
⎯
200
h_FE
150
100
⎯
V_CE(sat)
⎯
⎯
R_CE(sat)
⎯
V_BE(sat)
⎯
V_BE(on)
⎯
Transition Frequency
f_T
150
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
C_ob
⎯
t_on
⎯
t_d
⎯
t_r
⎯
t_off
⎯
t_s
⎯
t_f
⎯
Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Typ
Max Unit
Test Conditions
⎯
⎯
V I_C = -100μA
⎯
⎯
V I_C = -10mA
⎯
⎯
V I_E = -100μA
⎯
-100
nA V_CB = -20V, I_E = 0
⎯
-50
μA V_CB = -20V, I_E = 0, T_A = 150°C
⎯
-100
nA V_EB = -5V, I_C = 0
⎯
⎯
V_CE = -5V, I_C = -1mA
⎯
⎯
⎯ V_CE = -5V, I_C = -500mA
⎯
⎯
V_CE = -5V, I_C = -1A
⎯
-175
I_C = -100mA, I_B = -1mA
⎯
-180
mV IC = -500mA, IB = -50mA
⎯
-340
I_C = -1A, I_B = -100mA
⎯
340
mΩ I_E = -1A, I_B = -100mA
⎯
-1.1
V I_C = -1A, I_B = -50mA
⎯
-0.9
V V_CE = -5V, I_C = -1A
⎯
⎯
MHz ^{VCE = -10V, IC = -50mA,}
f = 100MHz
⎯
15
pF V_CB = -10V, f = 1MHz
75
⎯
ns
35
⎯
ns
40
⎯
ns _{VCC = -10V, IC = -0.5A,}
265
⎯
ns _{IB1 = IB2 = -25mA}
230
⎯
ns
35
⎯
ns
DSS5160T
Document number: DS35532 Rev. 1 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated