DSS4160V Datasheet, PDF (3/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

1,000
800
600
400
200
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
V_CE = 5V
0
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 5V
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2
T_A = 150°C
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
200
160
f = 1MHz
120
1
I_C/I_B = 10
0.1
0.01
DSS4160V
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2 T_A = 150°C
0
0.1
1
10
100 1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
80
C_ibo
40
0
0.1
C_obo
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DSS4160V
Document number: DS31671 Rev. 2 - 2
3 of 5
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March 2009
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