DSS3540M Datasheet, PDF (3/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

DSS3540M
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
BV_CBO
BV_CEO
BV_EBO
Min Typ
-40
⎯
-40
⎯
-6
⎯
Collector Cutoff Current
I_CBO
⎯
⎯
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
I_EBO
⎯
⎯
200 ⎯
h_FE
150 ⎯
40
⎯
⎯
⎯
V_CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
R_CE(sat)
⎯
⎯
V_BE(sat)
⎯
⎯
V_BE(on)
⎯
⎯
C_obo
f_T
⎯
⎯
100 ⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
-100
-50
-100
⎯
⎯
⎯
-50
-130
-200
-350
700
-1.2
-1.1
10
⎯
Unit
Test Condition
V I_C = -100μA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100μA, I_C = 0
nA V_CB = -30V, I_E = 0
μA V_CB = -30V, I_E = 0, T_A = 150°C
nA V_EB = -5V, I_C = 0
V_CE = -2V, I_C = -10mA
⎯ V_CE = -2V, I_C = -100mA
V_CE = -2V, I_C = -500mA
I_C = -10mA, I_B = -0.5mA
mV ^{IC = -100mA, IB = -5mA}
I_C = -200mA, I_B = -10mA
I_C = -500mA, I_B = -50mA
mΩ I_C = -500mA, I_B = -50mA
V I_C = -500mA, I_B = -50mA
V V_CE = -2V, I_C = -100mA
pF V_CB = -10V, f = 1.0MHz
MHz V_CE = -5V, I_C = -100mA, f = 100MHz
1.0
0.9
0.8
0.7
I_B = -5mA
0.6
0.5
I_B = -4mA
0.4
I_B = -3mA
0.3
I_B = -2mA
0.2
I_B = -1mA
0.1
0
0
1
2
3
4
5
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
800
700
600
500
400
300
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
200
100
T_A = -55°C
0
0.1
1
10
100
1,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DSS3540M
Document number: DS31821 Rev. 2 - 2
3 of 5
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January 2011
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