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DSS30101L_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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DSS30101L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Equivalent On-Resistance (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-on Voltage (Note 4)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
Min
50
30
5
⎯
⎯
⎯
300
300
200
⎯
⎯
⎯
⎯
⎯
⎯
Transition Frequency
fT
100
Output Capacitance
Input Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
⎯
Cibo
⎯
ton
⎯
td
⎯
tr
⎯
toff
⎯
ts
⎯
tf
⎯
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
450
⎯
⎯
⎯
⎯
⎯
0.93
0.80
250
9
65
57
19
38
340
315
25
Max
⎯
⎯
⎯
100
50
100
⎯
900
⎯
75
125
200
200
1.1
1.1
⎯
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
⎯
mV
mΩ
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Test Conditions
IC = 100μA
IC = 10mA
IE = 100μA
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 150°C
VEB = 4V, IC = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 1A
IC = 0.1A, IB = 1mA
IC = 0.5A, IB = 50mA
IC = 1.0A, IB = 100mA
IE = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 1A
VCE = 5V, IC = 100mA,
f = 100MHz
VCB = 10V, f = 1MHz
VEB = 5V, f = 1MHz
VCC = 5V, IC = 500mA,
IB1 = -IB2 = 50mA
2.2
2.0
IB = 5mA
1.8
1.6
IB = 4mA
1.4
IB = 3mA
1.2
1.0
IB = 2mA
0.8
0.6
IB = 1mA
0.4
0.2
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1,200
1,100
1,000
TA = 150°C
900
TA = 125°C
800
TA = 85°C
700
600
TA = 25°C
500
400
300
TA = -55°C
200
100
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
DSS30101L
Document number: DS31588 Rev. 3 - 2
3 of 6
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August 2010
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