DSS2540M Datasheet, PDF (3/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

DSS2540M
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
R_CE(sat)
V_BE(sat)
V_BE(on)
C_obo
f_T
Min Typ Max
40
⎯
⎯
40
⎯
⎯
6
⎯
⎯
⎯
⎯
100
50
⎯
⎯ 100
200
⎯
⎯
150
⎯
⎯
50
⎯
⎯
⎯
⎯
50
⎯
⎯ 100
⎯
⎯ 200
⎯
⎯ ²⁵⁰
⎯
⎯ 500
⎯
⎯ 1.2
⎯
⎯ 1.1
⎯
⎯
6
250 300 ⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100μA, I_C = 0
nA V_CB = 30V, I_E = 0
μA V_CB = 30V, I_E = 0, T_A = 150°C
nA V_EB = 5V, I_C = 0
V_CE = 2V, I_C = 10mA
⎯ V_CE = 2V, I_C = 100mA
V_CE = 2V, I_C = 500mA
I_C = 10mA, I_B = 0.5mA
mV ^{IC = 100mA, IB = 5mA}
I_C = 200mA, I_B = 10mA
I_C = 500mA, I_B = 50mA
mΩ I_C = 500mA, I_B = 50mA
V I_C = 500mA, I_B = 50mA
V V_CE = 2V, I_C = 100mA
pF V_CB = 10V, f = 1.0MHz
MHz V_CE = 5V, I_C = 100mA, f = 100MHz
1.00
0.80
0.60
0.40
0.20
I_B = 5mA
I_B = 4mA
I_B = 3mA
I_B = 2mA
I_B = 1mA
0
0
1
2
3
4
5
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1,000
900
800
700
600
500
400
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
300
200
T_A = -55°C
100
0
1
10
100
1,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DSS2540M
Document number: DS31820 Rev. 3 - 2
3 of 5
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January 2011
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