DSS20200L Datasheet, PDF (3/5 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

2.0
1.8
1.6
1.4
I_B = -5mA
1.2
I_B = -4mA
1.0
I_B = -3mA
0.8
0.6
I_B = -2mA
0.4
I_B = -1mA
0.2
0
0
2
4
6
8
10
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
I_C/I_B = 10
1,000
100
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
DSS20200L
V_CE = -2V
10
0.1
1
10
100 1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1.2
V_CE = -2V
1.0
0.1
0.01
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 _{TA = 85°C}
T_A = 150°C
0.2
0
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.8
T_A = -55°C
0.6 T_A = 25°C
T_A = 85°C
0.4
T_A = 150°C
0.2
100
10
C_ibo
C_obo
0
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
DSS20200L
Document number: DS31604 Rev. 2 - 2
3 of 5
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December 2008
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