DRDPB26W Datasheet, PDF (3/9 Pages) Diodes Incorporated – COMPLEX ARRAY FOR RELAY DRIVERS

Electrical Characteristics, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
V_CE(SAT)
V(BR)CBO
V_(BR)CEO
V(BR)EBO
I_CBO
I_EBO
f_T
C_obo
Min
150

45
18
5


100

Max
800
0.5



1
1

8
Unit

V
V
V
V
µA
µA
MHz
pF
Test Condition
I_C = 100mA, V_CE = 1V
IC = 300mA, IB = 30mA
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CB = 40V, I_E = 0
VEB = 4V, IC = 0
V_CE = 10V, I_C = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V(BR)CEO
V_(BR)EBO
I_CBO
I_CES
hFE
V_CE(SAT)
V_BE(SAT)
f_T
Min
80
80
4.0


100


100
Max



100
100

0.25
1.2

Unit
V
V
V
nA
nA

V
V
MHz
Test Condition
I_C = 100µA, I_E = 0
I_C = 1.0mA, I_B = 0
I_E = 100µA, I_C = 0
V_CB = 60V, I_E = 0
VCB = 80V, IE = 0
V_CE = 60V, I_BO = 0V
V_CE = 80V, I_BO = 0V
IC = 10mA, VCE = 1.0V
I_C = 100mA, V_CE = 1.0V
I_C = 100mA, I_B = 10mA
IC = 100mA, VCE = 1.0V
V_CE = 2.0V, I_C = 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
V_CE(SAT)
V(BR)CBO
V_(BR)CEO
V(BR)EBO
I_CBO
fT
C_obo
Min
100

-60
-60
-5

200

Max
300
-0.4



-10

8
Unit

V
V
V
V
nA
MHz
pF
Test Condition
I_C = -150mA, V_CE = -10V
IC = -150mA, IB = -15mA
I_C = -10µA, I_E = 0
IC = -10mA, IB = 0
I_E = -10µA, I_C = 0
V_CB = -50V, I_E = 0
V_CE = -20V, I_C = -50mA, f = 100MHz
V_CB = -10V, I_E = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor ^{@ TA = 25°C unless otherwise specified}
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
V_l(off)
Vl(on)
V_O(on)
Il
I_O(off)
Gl
fT
Min Typ Max Unit
Test Condition
0.3

 V VCC = 5V, IO = 100µA

 2.0 V VO = 0.3V, IO = 20mA

 0.3V V IO/Il = 50mA/2.5mA

 7.2 mA VI = 5V

 0.5 µA VCC = 50V, VI = 0V
56

  VO = 5V, IO = 50mA

200

MHz
VCE = 10V, IE = 5mA,
f = 100MHz
DS30573 Rev. 8 - 2
3 of 9
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