DMTH4004SCTBQ Datasheet, PDF (3/7 Pages) Diodes Incorporated – 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

150.0
120.0
90.0
60.0
V_GS=10.0V
V_GS=6.0V
V_GS=5.0V
V_GS=4.5V
30.0
0.0
0
V_GS=4.0V
V_GS=3.5V
0.5
1
1.5
2
2.5
3
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DMTH4004SCTBQ
30
V_DS= 5.0V
25
20
175℃
150℃
15
125℃
10
85℃
5
25℃
-55℃
0
0
1
2
3
4
5
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
3.00
2.90
2.80
2.70
2.60
V_GS=10.0V
2.50
2.40
2.30
2.20
2.10
2.00
10 30 50 70 90 110 130 150
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current
and Gate Voltage
15
12
9
6
I_D=100A
3
0
2 4 6 8 10 12 14 16 18 20
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.006
0.005
V_GS=10V
175℃
150℃
2.2
2
V_GS=10V, I_D=90A
1.8
0.004
0.003
0.002
0.001
125℃
85℃
25℃
-55℃
0
10 30 50 70 90 110 130 150
I_D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current
and Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
DMTH4004SCTBQ
Document number: DS37796 Rev. 2 - 2
3 of 7
www.diodes.com
November 2015
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