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DMT8012LFG Datasheet, PDF (3/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET
◁
30.0
25.0
20.0
15.0
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
30
VDS = 10V
25
20
15
DMT8012LFG
10.0
5.0
VGS = 2.5V
0.0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.02
10
TA = 150°C
5
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
00 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
0.018
0.016
0.014
0.012
0.01
0.008
0.006
VGS = 6.0V
VGS = 10V
0.08
0.06
0.04
0.02
ID = 12A
ID = 6A
0.004
0
2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.04
0.035
VGS = 10V
0.03
0.025
0.02
0.015
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
2
VGS = 10V
ID = 12A
1.6
VGS = 6V
ID = 6A
1.2
0.8
0.005
0
0
5
10
15
20 25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMT8012LFG
Document number: DS36606 Rev. 3 - 2
0.4
30
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
3 of 6
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July 2014
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