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| DMP2130LDM_15 Datasheet, PDF (3/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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VGS = -2.5V
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
-ID = 250µA
DMP2130LDM
Ciss
Coss
Crss
f = 1 MHz
VGS = 0V
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
VGS = -4.5V
ID = -3.0A
VGS = -10V
ID = -3.5A
VGS = -2.5V
ID = -1.0A
TA, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
DMP2130LDM
Document number: DS31118 Rev. 6 - 2
3 of 4
www.diodes.com
May 2008
© Diodes Incorporated
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