DMP1200UFR4_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

15.0
V_GS = -3.0V
V_GS = -4.0V
12.0
V_GS = -4.5V
V_GS = -8.0V
9.0
6.0
V_GS = -1.8V
3.0
0.0 ₀
0.3
V_GS = -1.5V
V_GS = -1.2V
V_GS = -1.0V
0.5
1
1.5
2
2.5
3
, V_DS DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.25
0.2
0.15
0.1
V_GS = -1.5V
V_GS = -1.8V
V_GS = -2.5V
V_GS = -4.5V
0.05
00
0.14
0.12
0.1
3
6
9
12
15
I_D, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V_GS = -4.5V
 ^{TA = 150°C}
T_A = 125°C
0.08
TA = 85°C
TA = 25°C
0.06 ^{TA = -55°C}
0.04
0.02
0
0
1
I _D,² DRA3IN
45
SOURCE
6 78
CURRENT (A)
9
10
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP1200UFR4
10
9
V_DS = -5.0V
8
7
6
5
4
3
2
1
0
0
0.5
T_A = 125°C
T _A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.5
1
1.5
2
2.5
V ,_GS GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.4
I_D = -2.0A
0.3
0.2
I_D = -1.0A
0.1 _{ID = -500mA}
0
01 23 45 67 8
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
2
1.8
1.6
V_GS = -2.5V
1.4
I_D = -2.0A
1.2
1
V_GS = -1.8V
0.8
I_D = -1.0A
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMP1200UFR4
Document number: DS36557 Rev. 2 - 2
3 of 6
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October 2014
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