DMNH6008SCT Datasheet, PDF (3/7 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMNH6008SCT
50.0
45.0
40.0
35.0
V_GS = 10.0V
V_GS=5.0V
V_GS = 4.5V
30.0
25.0
20.0
15.0
10.0
V_GS = 4.0V
5.0
0.0
0
V_GS = 3.5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10.00
9.00
8.00
7.00
6.00
5.00
V_GS = 10V
4.00
3.00
2.00
1.00
0.00
0 5 10 15 20 25 30 35 40 45 50
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
20
V_DS = 5.0V
15
10
5
0
0
20
18
16
14
12
10
8
6
4
2
0
2
T_J=85℃
T_J=125℃
T_J=150
T_J=17^℃5℃
T_J=25℃
T_J=-55℃
1
2
3
4
5
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
I_D = 20A
4 6 8 10 12 14 16 18 20
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.016
0.014
0.012
T_J=175℃
T_J=150℃
V_GS = 10V
0.01
0.008
0.006
0.004
0.002
T_J=125℃
T_J=85℃
T_J=25℃
T_J=-55℃
0
0
5
10
15
20
I_D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2.2
2
1.8
1.6
1.4
1.2
1
0.8
V_GS = 10V, I_D = 20A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated