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| DMN62D0UW Datasheet, PDF (3/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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1.0
VGS=2.5V
0.8
VGS=3.0V
VGS=4.5V
VGS=2.0V
0.6
VGS=1.8V
0.4
0.2
0.0
0
VGS=1.5V
VGS=1.3V
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.8
VDS=5V
0.6
DMN62D0UW
0.4
0.2
0
0.5
TA=125â
TA=150â
TA=85â
TA=25â
TA=-55â
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
2.5
2
VGS=2.5V
1.5
VGS=4.5V
1
0.5
2.5
2
1.5
ID=100mA
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1
0
5
10
15
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
4.5
4
VGS= 4.5V
TA=150â
TA=125â
3.5
TA=85â
3
2.5
2
TA=25â
1.5
1
TA=-55â
0.5
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN62D0UW
Document number: DS38028 Rev. 1 - 2
3 of 6
www.diodes.com
2.2
2
1.8
VGS=4.5V, ID=100mA
1.6
1.4
1.2
VGS=2.5V, ID=50mA
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (â)
Figure 6. On-Resistance Variation with Junction
Temperature
August 2015
© Diodes Incorporated
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