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DMN6013LFG_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
30
27
24
21
18
15
12
9
6
3
0
0
0.014
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS = 4.5V
0.012
0.01
0.008
VGS = 10V
30
VDS = 5.0V
25
DMN6013LFG
20
15
10
TA = 150°C
5
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
ID = 10A
0.025
ID = 8mA
0.02
0.015
0.01
0.006 0
0.024
0.022
0.02
0.018
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 10V
TA = 150°C
TA = 125°C
0.005
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.2
2
VGS = 10V
ID = 10A
1.8
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
00
TA = 85°C
TA = 25°C
TA = -55°C
2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
1.6
VGS = 4.5V
1.4
ID = 8A
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
3 of 6
www.diodes.com
June 2014
© Diodes Incorporated