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DMN3029LFG_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
DMN3029LFG
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001 0.0001
D = 0.9
RθJA(t)=r(t) * RθJA
RθJA = 60°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
100
1,000
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
30
IDSS
-
IGSS
-
VGS(th)
0.9
-
RDS (ON)
-
|Yfs|
-
VSD
-
Ciss
-
Coss
-
Crss
-
Rg
-
Qg
-
Qg
-
Qgs
-
Qgd
-
tD(on)
-
tr
-
tD(off)
-
tf
-
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
Typ
-
-
-
1.2
13,5
22
13.0
0.7
580
110
70
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
Max
-
0.1
±100
1.8
18.6
26.5
-
1.0
-
-
-
3.0
-
-
-
-
-
-
-
-
Unit
Test Condition
V
VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±25V, VDS = 0V
V
VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
S
VDS = 5V, ID = 10A
V
VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
nC VGS = 10V, VDS = 15V,
ID = 10A
ns
ns VGS = 10V, VDS = 15V,
ns RL = 15Ω, RG = 6Ω
ns
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated