DMN3025LFG_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

DMN3025LFG
30
30
25
25 V_DS = 5.0V
20
20
15
15
10
5
0
0
0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.030
10
T_A = 150°C
5
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0
0
1
2
3
4
5
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.10
0.025
0.020
0.015
0.010
0.005
V_GS = 4.5V
V_GS = 10V
0.08
0.06
0.04
I_D = 10A
0.02
0
0
0.08
5
10
15
20
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.07
V_GS = 4.5V
0.06
0.05
T_A = 150°C
T_A = 125°C
0.04
0.03
0.02
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.01
0
0
5
10
15
20
25 30
I_D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
3
4
5
6
7
8
9 10
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
V_GS = 10V
I_D = 10A
1.4
1.2
V_GS = 4.5V
I_D = 5A
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
3 of 6
www.diodes.com
November 2012
© Diodes Incorporated