DMN2215UDM_15 Datasheet, PDF (3/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

1
V_GS = 1.8V
0.1
V_GS = 2.5V
V_GS = 4.5V
0.01
0.01
0.1
1
10
I_D, DRAIN-SOURCE CURRENT
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
1
0.8
I_D = 250µA
DMN2215UDM
1.8
V_GS = 2.5V
I_D = 1.5A
1.6
V_GS = 4.5V
I_D = 2.5A
1.4
1.2
V_GS = 1.8V
I_D = 1.0A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
1,000
f = 1MHz
0.6
0.4
0.2
0
-50 -25 0
25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Temperature
10
1
C_iss
100
C_oss
C_rss
10
0 2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V_SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
3 of 4
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June 2008
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