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| DMG6968UTS_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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DMG6968UTS
30
VGS = 8V
VGS = 4.5V
25
VGS = 3.0V
VGS = 2.5V
20
VGS = 2.0V
15
VGS = 1.5V
10
5
0
0
0.05
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.04
0.03
0.02
0.01
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
20
VDS = 5V
16
12
8
4
0
0
0.04
0.03
0.02
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VGS = 4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
5
10
15
20
25 30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
0
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.04
1.4
VGS = 2.5V
ID = 5.5A
0.03
1.2
VGS = 4.5V
ID = 10A
0.02
VGS = 2.5V
ID = 5.5A
1.0
0.01
VGS = 4.5V
ID = 10A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG6968UTS
Document number: DS31793 Rev. 5 - 2
3 of 6
www.diodes.com
March 2012
© Diodes Incorporated
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