DMG6602SVTQ Datasheet, PDF (3/10 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMG6602SVTQ
Electrical Characteristics – Q1 NMOS (@ TA = +25°C unless otherwise stated.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
BVDSS
30
IDSS
-
IGSS
-
VGS(th)
1.0
RDS (ON)
-
Typ Max
-
-
-
1.0
-
±100
-
2.3
38
60
55
100
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
4
-
-
0.8
1
-
290 400
-
40
80
-
40
80
-
1.4
-
-
4
6
-
9
13
-
1.2
-
-
1.5
-
-
3
-
-
5
-
-
13
-
-
3
-
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
V
µA
nA
V
mΩ
S
V
pF
Ω
nC
ns
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.1A
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A
VDS = 15V, VGS = 0V,
f = 1.2MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A
VDS = 15V, VGS = 10V, ID = 3A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 4.7Ω
10.0
8.0
6.0
4.0
2.0
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_DS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
10
V_DS= 5.0V
8
6
4
2
0
0
1
2
3
4
5
V_GS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
3 of 10
www.diodes.com
December 2014
© Diodes Incorporated