DMG2301U Datasheet, PDF (3/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

DMG2301U
0.25
0.20
0.15
0.10
0.05
V_GS = -1.8V
V_GS = -2.5V
V_GS = -4.5V
0
0.1
1.7
1
10
-I_D, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
V_GS = -2.5V
I_D = -5A
1.3
V_GS = -5V
1.1
I_D = -10A
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.6
0.16
0.12
V_GS = -4.5V
0.08
0.04
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0
0
2
4
6
8
10
-I_D, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.16
0.12
0.08
V_GS = -2.5V
I_D = -5.5A
0.04
V_GS = -5V
I_D = -10A
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
10
1.2
0.8
I_D = -1mA
I_D = -250µA
0.4
8
6
T_A = 25°C
4
2
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
-V_SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMG2301U
Document number: DS31848 Rev. 1 - 2
3 of 6
www.diodes.com
June 2009
© Diodes Incorporated