DMG1029SV_15 Datasheet, PDF (3/9 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMG1029SV
Electrical Characteristics N-CHANNEL – Q1 (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol Min
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
BV_DSS
60
@T_C = +25°C
I_DSS
—
I_GSS
—
Gate Threshold Voltage
Static Drain-Source On-Resistance
V_GS(th)
1.0
—
R_DS(ON)
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Y_fs|
80
V_SD
—
C_iss
—
C_oss
—
C_rss
—
Q_g
—
Q_gs
—
Q_gd
—
t_D(on)
—
t_r
—
t_D(off)
—
t_f
—
Typ
—
—
—
—
1.3
1.5
—
—
30
4.2
2.9
0.3
0.2
0.08
3.9
3.4
15.7
9.9
Max
—
10
±50
2.5
1.7
3
—
1.4
—
—
—
—
—
—
—
—
—
—
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
nA V_DS =50V, V_GS = 0V
nA V_GS = ±5V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
Ω
V_GS = 10V, I_D = 500mA
V_GS = 4.5V, I_D = 200mA
mS V_DS = 10V, I_D = 200mA
V
V_GS = 0V, I_S = 115mA
pF
pF
V_DS = 25V, V_GS = 0V,
f = 1.0MHz
pF
nC
nC
nC
V_GS = 4.5V, V_DS = 10V,
I_D = 250mA
ns
ns _{VDD = 30V, VGS = 10V,}
ns RG = 25Ω, ID = 200mA
ns
Electrical Characteristics P-CHANNEL – Q2 (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
BV_DSS
-60
@T_C = +25°C I_DSS
—
I_GSS
—
V_GS(th)
-1
—
R_{DS (ON)}
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Y_fs|
50
V_SD
—
C_iss
—
C_oss
—
C_rss
—
Q_g
—
Q_gs
—
Q_gd
—
t_D(on)
—
t_r
—
t_D(off)
—
t_f
—
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Typ
—
—
—
—
2.7
3.2
—
—
25
4.7
2.7
0.28
0.14
0.08
5.5
7.9
10.6
11.6
Max
—
-25
±100
-3.0
4
6
—
-1.4
—
—
—
—
—
—
—
—
—
—
Unit
Test Condition
V
V_GS = 0V, I_D = -250μA
nA V_DS = -50V, V_GS = 0V
nA V_GS = ±5V, V_DS = 0V
V
V_DS = V_GS, I_D = -250μA
Ω
V_GS = -10V, I_D = -500mA
V_GS = -4.5V, I_D = -200mA
mS V_DS = -25V, I_D = -100mA
V
V_GS = 0V, I_S = -115mA
pF
pF
V_DS = -25V, V_GS = 0V,
f = 1.0MHz
pF
nC
nC
nC
V_GS = -4.5V, V_DS = -10V,
I_D = -500mA
ns
ns _{VDD = -30V, VGS = -10V,}
ns RG = 50Ω, ID = -270mA
ns
DMG1029SV
Document number: DS35421 Rev. 3 - 2
3 of 9
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August 2013
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