DMC1030UFDB_15 Datasheet, PDF (3/9 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

20
V_GS = 4.5V
18
V_GS = 4.0V
16
V_GS = 3.5V
14 ^VGS ^{= 3.0V}
V_GS = 1.8V
V_GS = 2.0V
V_GS = 1.5V
12
10
8
6
4
V_GS = 1.0V
2
V_GS = 0.9V
00
0.5
1
1.5
2
2.5
3
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.05
V_GS = 1.5V
0.04
0.03
0.02
0.01
V_GS = 18V
V_GS = 2.5V
V_GS = 4.5V
DMC1030UFDB
20
18 ^{VDS = 5.0V}
16
14
12
10
8
6
T_A = 150°C
4
T_A = 125°C
T_A = 85°C
2
T_A = 25°C
T_A = -55°C
0
0
0.5
1
1.5
2
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.04
V_GS = 4.5V
0.03
0.02
0.01
T_A = 125°C
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0
0 2 4 6 8 10 12 14 16 18 20
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.8
V_GS = 2.5V
1.6
I_D = 5.0A
1.4
1.2
V_GS = 1.8V
1
I_D = 3.0A
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
0.00
0
2 4 6 8 10 12 14 16 18 20
I_D, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.06
0.05
0.04
0.03
0.02
0.01
V_GS = 1.8V
I_D = 3.0A
V_GS = 2.5V
I_D = 5.0A
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
3 of 9
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April 2014
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