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DDTC114ELP_1 Datasheet, PDF (3/5 Pages) Diodes Incorporated – PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
300
250
200
150
100
50
RθJA = 500 °C/W
0
0
2
1.8
1.6
1.4
25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
VO = 0.3V
IO = 5mA
1.2
1
0.8
0.6
0.4
0.2
0
-60
10
-30 0 30 60 90 120 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Typical Input Voltage vs. TA
IC/IB = 10
1
TA = 150 °C
0.1
TA = 85 °C
0.01
0.1
TA = 25 °C
TA = -55 °C
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical VCE(SAT) vs. IC
0.1
0.09
IB = 0.9mA
IB = 0.8mA
0.08
IB = 0.7mA
IB = 0.6mA
0.07
0.06
0.05
IB = 1.0mA
IB = 0.5mA
IB = 0.4mA
IB = 0.3mA
0.04
0.03
IB = 0.2mA
0.02
0.01
0
0
IB = 0.1mA
1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical IC VS. VCE
250
VCE = 5V
200
TA = 150 °C
150
TA = 85 °C
100
TA = 25 °C
TA = -55 °C
50
0
0.1
15
13.5
12
10.5
9
7.5
6
4.5
3
1.5
0
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain
1,000
VCE = 5V
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical VBE vs. IC
DS30945 Rev. 4 - 2
3 of 5
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DDTC114ELP
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