APT27H_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO92

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Static Ratio (Note 6)
Symbol
Min
Typ
BVCES
800
—
BVCEO
450
—
BVEBO
9
—
ICEV
—
—
VCE(sat)
—
—
15
23
hFE
6
15
Note:
6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
APT27H
Max
—
—
—
10
0.5
40
30
Unit
V
V
V
µA
V
—
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 800V, VBE = -1.5V
IC = 200mA, IB = 40mA
IC = 100mA, VCE = 10V
IC = 300mA, VCE = 10V
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
I =50mA
B
I =45mA
B
I =40mA
B
I =35mA
B
I =30mA
B
I =25mA
B
I =20mA
B
I =15mA
B
I =10mA
B
I =5mA
B
2
4
6
8
10
12
Collector-Emitter Voltage (V)
Static Characteristics
100
H =5
FE
10
1
0.1
0.01
0.05
T =250C
J
T =1250C
J
0.1
1
Collector Current (A)
Collector-Emitter Saturation Region
35
30
25
20
15
10
5
0
0.01
V =5V
CE
T =250C
J
TJ=125⁰C
0.1
1
Collector Current (A)
DC Current Gain
1.0
H =5
FE
0.9
0.8
0.7
0.6
0.5
0.05
T =250C
J
T =1250C
J
0.1
1
Collector Current (A)
Base-Emitter Saturation Voltage
APT27H
Datasheet Number: DS36303 Rev. 2 - 2
3 of 5
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October 2014
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