APT17_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – 480V NPN HIGH VOLTAGE POWER TRANSISTOR

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Diodes Incorporated
APT17
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Static Ratio (Note 6)
Symbol
BVCES
BVCEO
BVEBO
ICEV
hFE
Min
700
480
10
—
21
24.5
20
Max
—
—
—
10
36.5
35.5
45.5
Note:
6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Unit
V
V
V
µA
—
—
—
Test Condition
IC = 100µA, VBE = 0V
IC = 300µA
IE = 100µA
VCE = 700V, VBE = -1.5V
IC = 100µA, VCE = 20V
IC = 500µA, VCE = 20V
IC = 10mA, VCE = 20V
Typical Electrical Characteristics
35
30
T_J=125⁰C
25
T =25⁰C
J
20
15
10
5
0
1E-4
1E-3
0.01
Collector Current I (A)
C
DC Current Gain
V_CE=20V
V_CE=20V
0.1
100
T_J=150⁰C
10
T_J=125⁰C
1
0.1 ^TJ^=750C
0.01
T_J=25⁰C
1E-3
20
40
60
80
100
120
Percent of Collector-Emitter Reverse Voltage (%)
Typical Reverse Characteristics
APT17
Datasheet Number: DS36298 Rev. 3 - 2
3 of 5
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October 2014
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