APT13003E_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 465V NPN HIGH VOLTAGE POWER TRANSISTOR

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Static Ratio (Note 7)
Symbol
Min
Typ
BVCES
700
—
BVCEO
465
—
BVEBO
9
—
ICEV
—
—
15
—
hFE
13
17
5
—
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
—
—
0.17
0.29
—
—
Base-Emitter Saturation Voltage (Note 7)
VBE(sat)
—
—
Output Capacitance
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Cob
—
16
fT
4
—
ton
—
0.3
ts
—
1.8
tf
—
0.28
Note:
7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
APT13003E
Max
—
—
—
10
—
30
25
0.3
0.4
1.0
1.2
—
—
1
3
0.4
Unit
V
V
V
µA
—
—
—
V
V
pF
MHz
µs
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 700V, VBE = -1.5V
IC = 0.3A, VCE = 2V
IC = 0.5A, VCE = 2V
IC = 1.0A, VCE = 2V
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
VCB = 10V, f = 0.1MHz
IC = 0.1A, VCE = 10V
IC = 1A, VCC = 125V, IB1 = 0.2A,
IB2 = -0.2A, tp = 25µs
APT13003E
Datasheet Number: DS36304 Rev. 2 - 2
3 of 6
www.diodes.com
October 2014
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