AP9234L Datasheet, PDF (3/14 Pages) Diodes Incorporated – HIGH ACCURACY SINGLE CHIP SOLUTION FOR 1-CELL Li plus BATTERY PACK

Functional Block Diagram
DS
Test accelerate mode
Logic Circuit
Level Shift
0V
Charge
Option
Delay Time
Circuit
VM
RVMD
RVMS
Logic Circuit
AP9234L
VDD
VSS
G1
G2
S2
D1
D2
S1
S2
S1
EP
D
Absolute Maximum Ratings (Notes 5 & 6)
Symbol
Parameter
Rating
Unit
VDD
Supply Voltage (Between VDD and VSS)
-0.3 to 12
V
VDS
DS Terminal Input Voltage
-0.3 to VDD+0.3
V
VDM
Charge Input Voltage (Between VDD and VM for Protection Chip)
-0.3 to 24
V
VDSS
MOSFET Drain-to-Source Voltage
24
V
VGSS
MOSFET Gate-to-Source Voltage
±12
V
Continuous Drain Current, VGS=4.5V, TA = +25°C
ID
Continuous Drain Current, VGS=4.5V, TA = +70°C
9.0
A
7.1
A
TJ
Maximum Junction Temperature
+150
°C
TSTG
Storage Temperature Range
-65 to +150
°C
Notes:
5. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability.
6. Ratings apply to ambient temperature at +25°C. The JEDEC High-K board design used to derive this data was a 2 inch x 2 inch multilayer board with 2-
ounce internal power and ground planes and 2-ounce copper traces on the top and bottom of the board.
AP9234L
Document number: DS38205 Rev. 1 - 2
3 of 14
www.diodes.com
December 2015
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