AP5727_11 Datasheet, PDF (3/10 Pages) Diodes Incorporated – BIAS POWER SUPPLY FOR OLED SUB DISPLAY AND TFT-LED

AP5727
BIAS POWER SUPPLY FOR OLED
SUB DISPLAY AND TFT-LED
Absolute Maximum Ratings (T_A = 25°C)
Symbol
Parameter
Rating
Unit
V_IN
VIN Pin Voltage
-0.3~7
V
V_SW
SW Voltage
-0.3~32
V
V_FB
Feedback Pin Voltage
-0.3~7
V
EN
EN
-0.3~7
V
T_J(MAX)
Maximum Junction Temperature
150
°C
T_LEAD
Lead Temperature
300
°C
T_ST
Storage Temperature Range
-65 to +150
°C
Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be
exceeded under any condition.
Recommended Operating Conditions
Symbol
Parameter
Min
V_IN
Input Voltage
2.7
T_J
Operating Junction Temperature
-40
T_A
Operating Ambient Temperature
-40
Max
Unit
5.5
V
125
°C
85
°C
Electrical Characteristics (V_IN = 3.6V, T_A = 25°C, unless otherwise specified)
Symbol
Parameter
System Supply Input
V_IN Operating Input Voltage
UVLO Under Voltage Lockout
Under Voltage Lockout Hysteretic
I_Q Quiescent Current
I_SD Shutdown Current
Oscillator
F_OSC Operation Frequency
Dmax Maximum Duty Cycle
Reference Voltage
V_FB Feedback Voltage
I_FB FB Pin Bias Current
MOSFET
R_DS(on) On Resistance of MOSFET
I_OCP Switching Current Limit
Control and Protection
EN Voltage High
EN Voltage Low
I_EN EN Pin Pull Low Current
θ_JA
Thermal Resistance Junction-to-
Ambient
θ_JC
Thermal Resistance Junction-to-
Case
Conditions
FB=1.3V, No Switching
V_EN < 0.4V
Normal Operation
ON
OFF
SOT25 (Note 2)
SOT25 (Note 2)
Min. Typ. Max. Unit
2.7
-
5.5
V
-
2.2
2.4
V
-
85
-
mV
-
500
-
μA
-
0.1
1
μA
1
1.2
1.4
MHz
86
90
-
%
1.225 1.25 1.275
V
10
45
100
nA
-
0.95
1.2
Ω
-
750
-
mA
1.5
-
-
V
-
-
0.4
V
-
4
6
μA
162
o_C/W
36
o_C/W
Notes: 2. Test condition for SOT25: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout
AP5727
Document number: DS31887 Rev. 2 - 2
3 of 10
www.diodes.com
January 2011
© Diodes Incorporated