ZXTPS717MC Datasheet, PDF (2/10 Pages) Diodes Incorporated – 12V PNP LOW SATURATION TRANSISTOR AND

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Diodes Incorporated
ZXTPS717MC
Maximum Ratings, Transistor
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (Notes a and f)
Continuous Collector Current (Notes b and f)
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_C
I_B
Limit
-20
-12
-7.5
-12
-4
-4.4
1
Unit
V
V
V
A
A
A
A
Thermal Characteristics, Transistor
Characteristic
Power Dissipation at T_A = 25°C (Notes a and f)
Linear Derating Factor
Power Dissipation at T_A = 25°C (Notes b and f)
Linear Derating Factor
Power Dissipation at T_A = 25°C (Notes c and f)
Linear Derating Factor
Power Dissipation at T_A = 25°C (Notes d and f)
Linear Derating Factor
Power Dissipation at T_A = 25°C (Notes d and g)
Linear Derating Factor
Power Dissipation at T_A = 25°C (Notes e and g)
Linear Derating Factor
Junction to Ambient (Notes a and f)
Junction to Ambient (Notes b and f)
Junction to Ambient (Notes c and f)
Junction to Ambient (Notes d and f)
Junction to Ambient (Notes d and g)
Junction to Ambient (Notes e and g)
Junction Temperature
Operating and Storage Temperature Range
Symbol
P_D
P_D
P_D
P_D
P_D
P_D
R_θJA
R_θJA
R_θJA
R_θJA
R_θJA
R_θJA
T_J
T_STG
Value
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
83
51
125
111
73.5
41.7
150
-55 to +150
Unit
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.
ZXTPS717MC
Document Number DS31936 Rev. 2 - 2
2 of 10
www.diodes.com
January 2010
© Diodes Incorporated