ZXTP749F_16 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 25V PNP LOW SATURATION TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
ZXTP749F
Value
Unit
-35
V
-25
V
-7
V
-3
A
-6
A
-500
mA
-2
A
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1 oz. copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP749F
Document Number: DS31901 Rev. 4 - 2
2 of 7
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January 2016
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