ZXTP749F Datasheet, PDF (2/7 Pages) Diodes Incorporated – 25V PNP LOW SATURATION TRANSISTOR IN SOT23

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
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Diodes Incorporated
ZXTP749F
Value
Unit
-35
V
-25
V
-7
V
-3
A
-6
A
-500
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
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