ZXTP558L Datasheet, PDF (2/5 Pages) Diodes Incorporated – 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR

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Diodes Incorporated
ZXTP558L
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
-400
-400
-7
-500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note x)
Thermal Resistance, Junction to Ambient @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 4)
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CES
I_EBO
h_FE
V_CE(sat)
V_BE(on)
V_BE(sat)
C_obo
Min
-400
-400
-7
⎯
⎯
⎯
100
100
⎯
⎯
⎯
⎯
⎯
Current Gain-Bandwidth Product
f_T
50
Turn-On Time
Turn-Off Time
t_on
⎯
t_off
⎯
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs; Duty cycle ≤ 2%.
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
95
1600
Max
⎯
⎯
⎯
-100
-100
-100
⎯
300
-0.2
-0.5
-0.9
-0.9
5
⎯
⎯
⎯
Unit
V
V
V
nA
nA
nA
⎯
⎯
V
V
V
pF
MHz
ns
ns
Test Condition
I_C = -100μA
I_C = -10mA
I_E = -100μA
V_CB = -320V
V_CE = -320V
V_BE = -4V
V_CE = -10V, I_C = -1mA
V_CE = -10V, I_C = -50mA
I_C = -20mA, I_B = -2mA
I_C = -50mA, I_B = -6mA
V_CE = -10V, I_C = -50mA
I_C = -50mA, I_B = -5mA
V_CB = -20V, f = 1.0MHz
V_CE = -20V, I_C = -10mA,
f = 20MHz
V_CE = -100V, I_C = -50mA
I_B1 = 5mA, I_B2 = -10mA
ZXTP558L
Document number: DS32186 Rev. 1 - 2
2 of 5
www.diodes.com
June 2010
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