ZXTN5551G Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 160V, SOT223, NPN high voltage transistor

ZXTN5551G
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current^(a)
Power dissipation at T_A = 25°C^(a)
Linear derating factor
Operating and storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
Limit
180
160
6
600
2
16
-55 to 150
Unit
V
V
V
mA
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient^(a)
Symbol
R_⍜JA
Value
62.5
Unit
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - August 2007
2
© Zetex Semiconductors plc 2007
www.zetex.com