ZXTN26070CV Datasheet, PDF (2/7 Pages) Diodes Incorporated – 70V NPN LOW SATURATION TRANSISTOR IN SOT-666

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Diodes Incorporated
ZXTN26070CV
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
150
70
7
2
5
500
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Note 4)
Power Dissipation at T_A = 25°C (Note 5)
Thermal Resistance, Junction to Ambient (Note 4) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 5) @ T_A = 25°C
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJL
T_J, T_STG
Value
0.6
1
208
121
37
-55 to +150
Notes:
4. For a device surface mounted minimum recommended pad layout, in still air conditions
5. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.
6. From Collector leads. Typical.
Unit
W
W
°C/W
°C/W
°C/W
°C
ZXTN26070CV
Document number: DS32129 Rev. 3 - 2
2 of 7
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April 2010
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