ZXTN25100DG_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – QFZT653

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
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Diodes Incorporated
ZXTN25100DG
QFZT653
Value
Unit
180
V
180
V
100
V
6
V
7
V
3
A
1
A
3.5
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 6)
Power Dissipation
Linear Derating Factor
(Note 7)
PD
(Note 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
RθJA
RθJL
TJ, TSTG
Value
1.2
9.6
1.6
12.8
3
24
5.3
42
104
78
42
23.5
16
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 11)
Characteristic
Symbol
Value
Unit JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8 measured at t<5 seconds.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN25100DG
Document Number DS33705 Rev. 3 - 2
2 of 7
www.diodes.com
May 2015
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