ZXTN25060BZQ Datasheet, PDF (2/8 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
ZXTN25060BZQ
Value
Unit
150
V
150
V
60
V
6
V
7
V
5
A
1
A
10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.1
1.8
2.4
4.46
117
68
51
28
8
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
8. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
9. Same as Note 7 measured at t<5 seconds.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN25060BZQ
Document number: DS38348 Rev. 1 - 2
2 of 8
www.diodes.com
October 2015
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