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ZXTN25050DFH Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 50V, SOT23, NPN medium power transistor
ZXTN25050DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current (c)
Base current
Peak pulse current
Power dissipation at Tamb =25°C (a)
Linear derating factor
Power dissipation at Tamb =25°C (b)
Linear derating factor
Power dissipation at Tamb =25°C (c)
Linear derating factor
Power dissipation at Tamb =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
150
150
50
5
7
4
1
10
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
Junction to ambient (b)
Junction to ambient (c)
Junction to ambient (d)
Symbol
R⍜JA
R⍜JA
R⍜JA
R⍜JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 3 - September 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com