ZXTN2010A Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

ZXTN2010A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current ^(a)
Peak pulse current
Practical power dissipation ^(a)
Linear derating factor
Power dissipation at T_A =25°C ^(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
LIMIT
150
60
7
4.5
15
1.0
8
0.71
5.7
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient ^(a)
Junction to ambient ^(b)
SYMBOL
R_⍜JA
R_⍜JA
VALUE
125
175
UNIT
°C/W
°C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
SEMICONDUCTORS
2
ISSUE 2 - MAY 2006