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ZXTN19060CG Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 60V NPN low sat medium power transistor | |||
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ZXTN19060CG
Absolute maximum ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage (forward blocking)
Collector-Emitter voltage
Emitter-Collector voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current(c)
Base current
Peak pulse current
Power dissipation at TA =25°C(a)
Linear derating factor
Power dissipation at TA =25°C(b)
Linear derating factor
Power dissipation at TA =25°C(c)
Linear derating factor
Power dissipation at TA =25°C(d)
Linear derating factor
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECX
VEBO
IC
IB
ICM
PD
PD
PD
PD
PD
Tj, Tstg
Limit
160
160
60
6
7
7
1
12
1.2
9.6
1.6
12.8
3.0
24
5.3
42
10.2
81
-55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Junction to case(e)
Symbol
RâJA
RâJA
RâJA
RâJA
RâJC
Limit
104
78
42
23.5
12.3
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
Issue 1 - February 2008
2
© Zetex Semiconductors plc 2008
www.zetex.com
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