ZXTD717MC_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – DUAL 12V PNP LOW SATURATION TRANSISTORS

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Diodes Incorporated
ZXTD717MC
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
-20
Collector-Emitter Voltage
V_CEO
-12
V
Emitter-Base Voltage
V_EBO
-7
Peak Pulse Current
I_CM
-12
Continuous Collector Current
(Notes 3 & 6)
(Notes 4 & 6)
I_C
-4
-4.4
A
Base Current
I_B
1
Thermal Characteristics @ T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 3 & 6)
(Notes 4 & 6)
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 3 & 6)
(Notes 4 & 6)
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 6 & 8)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
3. For a dual device surface mounted on 28mm x 28mm (8cm²) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper.
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
2 of 7
www.diodes.com
December 2010
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